? 2015 ixys corporation, all rights reserved ds100425c(6/15) high voltage power mosfet features ? international standard packages ? molding epoxies weet ul 94 v-0 flammability classification ? fast intrinsic diode ? low package inductance advantages ? easy to mount ? space savings ? high power density applications ? high voltage power supplies ? capacitor discharge ? pulse circuits ixtt12n150 IXTH12N150 v dss = 1500v i d25 = 12a r ds(on) ? ? ? ? ? 2.2 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 1500 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 1500 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c12a i dm t c = 25 ? c, pulse width limited by t jm 40 a i a t c = 25c 6 a e as t c = 25c 750 mj dv/dt i s ? i dm , v dd ? v dss ,t j ? 150 ? c 5 v/ns p d t c = 25 ? c 890 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l 1.6mm (0.062 in.) from case for 10s 300 ? c t sold plastic body for 10s 260 ? c m d mounting torque 1.13 / 10 nm/lb.in. weight to-268 4.0 g to-247 6.0 g n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1500 v v gs(th) v ds = v gs , i d = 250 ? a 2.5 4.5 v i gss v gs = ? 30v, v ds = 0v ????????????????????? 100 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 125 ? c 500 ?? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 2.2 ? g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d to-268 (ixtt) s g d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtt12n150 IXTH12N150 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 ? (external) note 1. pulse test, t ? 300 s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 8 13 s c iss 3720 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 240 pf c rss 80 pf t d(on) 26 ns t r 16 ns t d(off) 53 ns t f 14 ns q g(on) 106 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 17 nc q gd 50 nc r thjc 0.14 ?? c/w r thcs to-247 0.21 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 12 a i sm repetitive, pulse width limited by t jm 48 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 1.2 s i rm 24.5 a q rm 14.8 c i f = 6a, -di/dt = 100a/ ? s v r = 100v, v gs = 0v to-247 outline terminals: 1 - gate 2 - drain 3 - source to-268 outline terminals: 1 - gate 2,4 - drain 3 - source e ?? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2015 ixys corporation, all rights reserved ixtt12n150 IXTH12N150 fig. 6. input admittance 0 2 4 6 8 10 12 14 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5.5v 5v fig. 2. output characteristics @ t j = 125oc 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v ds - volts i d - amperes 5v 4v v gs = 10v 6v fig. 3. r ds(on) normalized to i d = 6a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 12a i d = 6a fig. 4. r ds(on) normalized to i d = 6a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 2 4 6 8 10 12 14 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. ixtt12n150 IXTH12N150 ixys ref: t_12n150 (8m) 5-23-11 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 02468101214 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v gs - volts v ds = 700v i d = 6a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s 10ms dc
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